Dynamic Suppression of Interface-State Dark Current in Buried-Channel CCD's

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 285-290

  Burke, Barry E ^a   Gajar, Stephanie A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

BURIED CHANNEL CCD'S; CARRIER GENERATION RATE; CCD IMAGER; GENERATION CURRENT; INTERFACE-STATE DARK CURRENT;

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0026105822     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69907     Document Type: Article

References (11)

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