Mathematical approach to large-signal modelling of electron devices

Electronics Letters

Volumn 27, Issue 4, 1991, Pages 357-359

  Filicori, F ^a   Vannini, G ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Electron devices; Modelling

Indexed keywords

MICROWAVE DEVICES - MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES, FIELD EFFECT - MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES, MESFET;

LARGE-SIGNAL MODELING; MESFET DRAIN CURRENT RESPONSE; MICROWAVE ELECTRON DEVICES;

SEMICONDUCTOR DEVICES, BIPOLAR;

EID: 0026105651     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910226     Document Type: Article

References (5)

1. Haigh, D., and Everard, J. (Eds.): ‘GaAs technology and its impact on circuits and systems’ (Peter Peregrinus Ltd. on behalf of Iee, 1989)
2. Rauscher, C., and Willing, H.: ‘Simulation of nonlinear microwave FET performance using a quasi-static model’, IEEE Trans., 1979, MTT-27, pp. 834–840
3. Filicori, F., and Monaco, V. A.: ‘Computer-aided design of nonlinear microwave circuits’, Alta Frequenza, 1988, 46, (7), pp. 355–378
4. Ghione, G., Filicori, F., and Naldi, C.: ‘Physical modeling of GaAs MESFET’s in an integrated CAD environment: From device technology to microwave circuit performance’, IEEE Trans., 1989, MTT-37, pp. 457–468
5. Sango, M., et al: ‘A GaAs MESFET large-signal circuit model for non-linear analysis’. IEEE MTT-S digest, 1988, pp. 1053–1056