Interaction Between Monolithic, Junction-Isolated Lateral Insulated-Gate Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 38, Issue 2, 1991, Pages 310-315

  Chow, T Paul ^a   Pattanayak, Deva N ^b   Adler, Michael S ^b   Hennessy, William A ^b   Logan, Clair E ^b   Baliga, B Jayant ^c  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Building K 1   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; TRANSISTORS, FIELD EFFECT;

HYBRID SCHOTTKY INJECTION FIELD EFFECT TRANSISTORS (HSINFET'S); JUNCTION ISOLATION; JUNCTION-ISOLATED LATERAL INSULATED-GATE BIPOLAR TRANSISTORS (LIGBT); MINORITY CARRIER INJECTORS; N-CHANNEL DEVICES; P-CHANNEL DEVICES;

TRANSISTORS, BIPOLAR;

EID: 0026105522     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.69911     Document Type: Article

References (8)

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8. T. P. Chow et al., “N-channel lateral insulated gate bipolar transistors: Part II—Dynamic switching performance,” to be published in IEEE Trans. Electron Devices.