Molecular beam study on scattering and sticking of molecular oxygen at Si(100)

Surface Science

Volumn 242, Issue 1-3, 1991, Pages 386-393

  Miyake, T ^a   Soeki, S ^a   Kato, H ^a   Nakamura, T ^a   Namiki, A ^a   Kamba, H ^b   Suzaki, T ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Toyoko Kagaku Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAMS--EFFECTS; MOLECULES; OXYGEN--ADSORPTION; SPECTROSCOPY, AUGER ELECTRON--APPLICATIONS; SURFACES--SPECTROSCOPIC ANALYSIS;

ELECTRON TRANSFER MODELS; MOLECULAR OXYGEN SCATTERING; MOLECULAR OXYGEN STICKING PROBABILITY; POTENTIAL ENERGY SURFACES; SILICON SURFACE OXYGEN DYNAMICS; SUPERSONIC MOLECULAR BEAMS;

SEMICONDUCTING SILICON;

EID: 0026103995     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(91)90296-5     Document Type: Article

References (34)

1. Metastable molecular precursor for the dissociative adsorption of oxygen on Si(111)
2. Adsorption of molecular oxygen on Si(111)
3. Oxidation of the Si(111) (7×7) surface: Electron energy loss spectroscopy, low-energy electron diffraction, and Auger electron spectroscopy studies
4. Oxidation kinetics of Si(111) 7×7 in the submonolayer regime
5. Differential trapping probabilities and desorption of physisorbed molecules: Application to NO/Ag(111)
6. The hard-spheroid model for gas-surface interactions
7. Gas-surface scattering distributions according to the hard-spheroid model
8. New experimental studies on the adsorption of K on Si(100) and Si(111)