High-performance carbon-doped base gaas/aigaas heterojunction bipolar transistor grown by MOCVD

Electronics Letters

Volumn 27, Issue 2, 1991, Pages 141-142

  Twynam, J K ^a   Sato, H ^a   Kinosada, T ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Bipolar devices; Transistors

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS - GROWTH; SEMICONDUCTING GALLIUM ARSENIDE - DOPING;

MICROWAVE HBT; MOCVD;

TRANSISTORS, BIPOLAR;

EID: 0026028409     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19910092     Document Type: Article

References (6)

1. Malik, R. J., Nottenburg, R. N., Schubert, E. F., Walker, J. F., and Ryan, R. W.: ‘Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament’, Appl. Phys. Lett., 1988, 53, pp. 2661–2663
2. Hayes, J. R., Bhat, R., Colas, E., and Esagui, R.: ‘Atomic layer epitaxy grown heterojunction bipolar transistor having a carbon doped base’. Extended abstracts of 20th conference on solid state devices and materials, Tokyo, 1988, pp. 527–529
3. Makimoto, T., Kobayashi, N., Ito, H., and Ishibashi, T.: ‘AlGaAs/ GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy’, Appl. Phys. Lett., 1989, 54, pp. 39–41
4. Cunningham, B. T., Stillman, B. G., and Jackson, G. S.: ‘Carbondoped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source’, Appl. Phys. Lett., 1990, 56, pp. 361–363
5. Ren, F., Abernathy, C. R., Pearton, S. J., Fullowan, T. R., Lothian, J., and Jordan, A. S.: ‘GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE’, Electron. Lett., 1990, 26, pp. 724–725
6. Lee, W.-S., Ueda, D., Ma, T., Pao, Y.-C., and Harris, J. S.: ‘Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors’, IEEE Electron Dev. Lett., 1989, EDL-10, pp. 200–202