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Volumn 42, Issue 5-6, 1991, Pages 333-340

Historical overview of SIMOX

(1) Izumi, Katsutoshi a

a NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING SILICON--ION IMPLANTATION; SUBSTRATES;

HIGH-CURRENT OXYGEN IMPLANTER; OXYGEN-ION IMPLANTATIONS; SIMOX TECHNOLOGY; SUBSTRATE WARP;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0025862556 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/0042-207X(91)90050-S Document Type: Article

Times cited : (21)

References (14)

1
- 85018654132
- Formation of SiO2Films by Oxygen-Ion Bombardment
- (1966) Japanese Journal of Applied Physics , vol.5 , pp. 737
- Watanabe¹ Tooi²

2
- 84919170610
- Tokyo
- (1987) Proc 12th Int Symp Hosei Univ , pp. 25
- Stephens¹ Hemment²

3
- 0017998279
- (1978) Electron Lett , vol.14 , pp. 593
- Izumi¹ Doken² Ariyoshi³

4
- 11644269381
- Berkeley
- (1986) Proc 6th Int Conf Ion Implant Tech , pp. 229
- Ruffell¹ Douglas-Hamilton² Kaim³ Izumi⁴

5
- 0019265434
- Tokyo
- (1979) Proc 11th Conf (1979 Int) Solid State Devices , pp. 151
- Izumi¹ Doken² Ariyoshi³

6
- 0021598428
- (1984) Mat Res Soc Symp Proc , vol.23 , pp. 443
- Izumi¹ Omura² Nakashima³

7
- 84919173519
- (1966) Trans IECE Japan , vol.49 , pp. 67
- Sugano¹ Kakemoto²

8
- 0020232921
- Symp VLSI Tech Dig
- Oiso
- (1982) Symp VLSI Tech Dig , pp. 10
- Izumi¹ Omura² Ishikawa³ Sano⁴

9
- 0020783164
- (1983) Electron Lett , vol.19 , pp. 568
- Nakashima¹ Akiya² Kato³

10
- 0021098146
- (1983) Electron Lett , vol.19 , pp. 1095
- Nakashima¹ Maeda²

11
- 0023457005
- (1987) IEEE Circuits Devices Mag , vol.3 , pp. 21
- Ohno¹ Izumi² Shimaya³ Shiono⁴

12
- 0022757282
- (1986) Electron Lett , vol.22 , pp. 775
- Izumi¹ Omura² Nakashima³

13
- 84919184174
- Hosei Univ, Tokyo
- (1988) Proc 7th Symp Ion Beam Tech
- Nakashima¹ Izumi²

14
- 0023541365
- (1987) IEEE IEDM Tech Dig , pp. 640
- Yoshimi¹ Wada² Kato³ Tango⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.