Effects of proton damage on charge-coupled devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1447, Issue , 1991, Pages 87-108

  Janesick, James R ^a   Soli, George ^a   Elliott, Tom ^a   Collins, Stewart A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROTONS--EFFECTS; SEMICONDUCTING SILICON--APPLICATIONS;

CCD CHARGE TRANSFER EFFICIECY; CCD PERFORMANCE PARAMETERS; PROTON-INDUCED DISPLACEMENT DAMAGE;

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0025842112     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)