SIMOX devices and circuits

Vacuum

Volumn 42, Issue 5-6, 1991, Pages 383-386

  Daniel Chen, CE ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS--MATERIALS;

PACKING DENSITY; RADIATION HARDNESS; SIMOX CIRCUITS; SIMOX DEVICES; SIMOX SUBSTRATES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0025792938     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0042-207X(91)90058-Q     Document Type: Article

References (32)

1. Silicon-on-insulator: Why, how and when
2. Dislocation Reduction on Simox Substrates by Using Multiple Implants
3. Electrical Evaluation of Simox Material and Integrated Devices
4. Symp VLSI Technol Digest
5. Improved subthreshold characteristics of n-channel SOI transistors
6. The multi-stable behaviour of SOI-NMOS transistors at low temperatures
7. Performance Advantages of Submicron Silicon-On-Insulator Devices for ULSI
8. Buried Oxide Soi: Materials, Devices, and VLSI Circuits
9. High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation
10. Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator
11. Total Dose Hardening of Buried Insulator in Implanted Silicon-on-Insulator Structures