35-kV GaAs Subnanosecond Photoconductive Switches

IEEE Transactions on Electron Devices

Volumn 37, Issue 12, 1990, Pages 2486-2492

  Pocha, Michael D ^a   Druce, Robert L ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; PHOTOCONDUCTING DEVICES; SEMICONDUCTING GALLIUM ARSENIDE--RADIATION EFFECTS;

HIGH SPEED SWITCHES; PHOTOCONDUCTIVE SWITCHES; SUBNANOSECOND SWITCHES;

ELECTRIC SWITCHES, SEMICONDUCTOR;

EID: 0025717367     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.64522     Document Type: Article

References (11)

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6. For an excellent review see C. H. Lee, Ed., Picosecond Optoelectronic Devices. New York, NY: Academic Press, 1984.
7. F. J. Zutavern, presentation at 1988 Workshop on Optically and Electron Beam Controlled Semiconductor Switches, Old Dominion University, Norfolk, VA, May 23–24, 1988.
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9. W. T. White 111, C. G. Dease, M. D. Pocha, and G. H. Khanaka,“Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimension,” this issue, pp. 2532–2541.
10. F. J. Zutavern, G. M. Loubriel, and M. W. O'Malley, “Recent developments in opening photoconductive switches,” in Proc. 6th IEEE Pulsed Power Conf., pp. 577–580, 1987.
11. G. M. Loubriel, M. W. O”Malley, and F. J. Zutavern, “Toward pulsed power uses for photoconductive semiconductor switches: Closing switches,” in Proc. 6th IEEE Pulsed Power Conf., pp. 145–148. 1987.