A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 2001-2007

  Annamalai, N K ^a   Bockman, James F ^a   McGruer, N E ^b   Chapski, Joseph ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b NORTHEASTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE--SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE LAYERS; SIMOX PROCESS;

SEMICONDUCTOR DEVICES;

EID: 0025693424     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101221     Document Type: Article

References (9)

1. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (John Wiley & Sons, New York, 1982), pp. 435–440.
2. N. K. Annamalai and J. Chapski, “SOI Buried Oxide Leakage Currents,” Proceedings of the Fourth International Symposium on Silicon-On-Insulator Insulator Technology and Devices, The Electrochemical Society, Vol. 90–6, pp. 337–350 (1990).
3. E. H. Nicollian and J. R. Brews, MOS Physics & Technology (John Wiley & Sons, New York, 1982), p. 104, 151–152.
4. E. H. Nicollian and J. R. Brews, MOS Physics & Technology (John Wiley & Sons, New York, 1982), pp. 331–333.
5. F. T. Brady, W. A. Krull, and S. S. Li, “Total Dose Radiation Effects for Implanted Buried Oxides,” IEEE Trans. Nucl. Sci., Vol. NS-36, No. 6, pp. 2187–2191 (1989).
6. E. H. Nicollian and J. R. Brews, MOS Physics & Technology (John Wiley & Sons, New York, 1982), pp. 195.
7. T. P. Ma and P. V. Dressendorfer, “Ionizing Radiation Effects in MOS Devices and Circuits” (John Wiley & Sons, New York, 1989), p. 204.
8. T. P. Ma and P. V. Dressendorfer, “Ionizing Radiation Effects in MOS Devices and Circuits” (John Wiley & Sons, New York, 1989), p. 208–209.
9. P. J. McWhorter, D. M. Fleetwood, and R. A. Pastorek, “Comparison of MOS Capacitor and Transistor Postirradiation Response,” IEEE Trans. Nucl. Sci., Vol. NS-36, No. 6, pp. 1792–1799 (1989).