Tungsten silicide/titanium nitride compound gate for submicron CMOSFET

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 115-116

  Kim, K T ^a   Kang, L G ^a   Park, T S ^a   Shin, Y S ^a   Park, J K ^a   Lee, C J ^a   Hwang, C G ^a   Chin, D ^a   Park, Y E ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CMOSFETS; GATE MATERIALS; INTERCONNECTION LAYERS; LOW RESISTIVITY; MOS-FET; POLY GATES; POSITIVE BIAS; SILICON SUBSTRATES; SUBMICRON; TUNGSTEN SILICIDE; TUNNELING CURRENT;

TIN COMPOUNDS; TITANIUM NITRIDE; TUNGSTEN; SEMICONDUCTOR MATERIALS;

SILICIDES; SEMICONDUCTOR DEVICES, MOSFET;

COMPOUND-GATE MOSFET; DIGEST OF PAPER; POLY-GATE MOS;

EID: 0025692337     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111035     Document Type: Conference Paper

References (3)

1. B. Davari et al., 1987 Symp. VLSI Technology, pp 61.
2. M-L Chen et al., 1988 IEDM Technical Digest, pp 390.
3. S. M. Sze, Physics of Semiconductor Devices, Wiley Interscience, 2nd Edition, p 850.