Proton-induced displacement damage distributions and extremes in silicon microvolumes

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1776-1783

  Marshall, Paul W ^a,b   Dale, Cheryl J ^a   Burke, Edward A ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROTONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; STATISTICAL MECHANICS;

CHARGE INJECTION DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0025669255     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101191     Document Type: Article

References (10)

1. J.R. Srour, R.A. Hartmann, and K.S. Kitazaki, “Permanent Damage Produced by Single Proton Interactions in Silicon Devices,” IEEE Trans. Nucl. Sci., NS-33, 1597 (1986).
2. J.R. Srour and R.A. Hartmann, “Effects of Single Neutron Interactions in Silicon Integrated Circuits,” IEEE Trans. Nucl. Sci., NS-32, 4195 (1985).
3. C.J. Dale, P.W. Marshall, E.A. Burke, G.P. Summers, and G.E. Bender, “The Generation Lifetime Damage Factor and its Variance in Silicon,” IEEE Trans. Nucl. Sci., NS-36, 1872 (1989).
4. P.W. Marshall, C.J. Dale, E.A. Burke, G.P. Summers, and G.E. Bender, “Displacement Damage Extremes in Silicon Depletion Regions,” IEEE Trans. Nucl. Sci., NS-36, 1831 (1989).
5. E.A. Burke, “Energy Dependence of Proton-Induced Displacement Damage in Silicon,” IEEE Trans. Nucl. Sci., NS-33, 1276 (1986).
6. C.J. Dale, P.W. Marshall, and E.A. Burke, “Particle-induced Spatial Dark Current Fluctuations in Focal Plane Arrays,” this transactions.
7. E.J. Gumbel, Statistics of Extremes, Colombia University Press, New York (1958).
8. E. Castillio, Extreme Value Theory in Engineering, Academic Press, San Diego (1988).
9. G.J. Michon and H.K. Burke, “CID Image Sensing in Charged Coupled Devices,” Ed. D.F. Barbe, Springer-Verlag, New York (1980).
10. K.M.Murray, W.J.Stapor, and C.Castenada, “Calibrated Charged Particle Radiation System with Precision Dosimetric Measurement and Control,” Nucl. Inst. and Meth., A281 616 (1989).