Single Event Induced Transients In I/O Devices: A Characterization

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1974-1980

  Newberry, D M ^a   Kaye, D H ^a   Soli, G A ^b  

^a Advanced ECAD Department   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS;

INTERCONNECTED DEVICES; SINGLE EVENT UPSETS;

LOGIC DEVICES;

EID: 0025660889     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101217     Document Type: Article

References (2)

1. D.K. Nichols. W.E. Price, W.A Kolasinski, R. Koga, J.C. Pickel, J.T. Blandford, A.E. Waskiewicz, “Trends in Parts Susceptibility to Single Event Upset from Heavy Ions,” IEEE Transactions on Nuclear Science, NS-32, No. 6, 4189 (Dec 1985).
2. A. Peczalski, J. Bergman, D. Berndt, and J.C. Lai, “Physical SEU Model for Circuit Simulations,” IEEE Transactions on Nuclear Science, NS-35, No 6., 1591, (Dec 1988).