Sputtered tungsten for deep submicroncomplementary metal-oxide-semiconductor technology

Thin Solid Films

Volumn 193-194, Issue PART 1, 1990, Pages 501-510

  Dori, L ^a   Megdanis, A ^a   Brodsky, S B ^a   Arienzo, M ^a   Cohen, S A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICA; TUNGSTEN AND ALLOYS--SPUTTERING;

SUBMICRON TECHNOLOGY;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025638220     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(05)80060-4     Document Type: Article

References (15)

1. A new tungsten gate process for VLSI applications
2. Stress and microstructure of sputter-deposited thin films: Molecular dynamics investigations
3. Stress Modification in Tungsten Films Deposited by Ion-Assisted Evaporation
4. Radiation induced electron traps in silicon dioxide