Effect of radiation-induced charge on 1/f noise in MOS devices

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1696-1702

  Meisenheimer, T L ^a   Fleetwood, D M ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NOISE, SPURIOUS SIGNAL; SEMICONDUCTOR DEVICES, MOS;

INTERFACE TRAPS; RADIATION HARDNESS;

TRANSISTORS;

EID: 0025631160     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101179     Document Type: Article

References (19)

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