Low-Temperature Microwave Characteristics of Pseudomorphic InxGa1_xAs/In0.52Al0.48As Modulation-Doped Field-Effect Transistors

IEEE Electron Device Letters

Volumn 11, Issue 12, 1990, Pages 564-566

  Lai, R ^a   Bhattacharya, Pallab K ^a   Alterovitz, S A ^b   Downey, A N ^b   Chorey, C ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; MICROWAVE MEASUREMENTS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS - APPLICATIONS;

CRYOGENIC MEASUREMENT SYSTEM; CUTOFF FREQUENCY; DIFFERENTIAL BIAS CONDITIONS; MODFETS; PSEUDOMORPHIC DEVICES;

TRANSISTORS, FIELD EFFECT;

EID: 0025627380     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.63041     Document Type: Article

References (10)

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4. G. I. Ng, W. P. Hong, D. Pavlidis, M. Tutt, and P. K. Bhattacharya, “Characteristics of strained In0.65Ga0.35As/In0.52A10.48As HEMT with optimized transport parameters,” IEEE Electron Device Lett., vol. 9, pp. 439–441, Sept. 1988.
5. U. K. Mishra, A. S. Brown, and S. E. Rosenbaum, “DC and RF performance of 0.1 μm gate length Al0.48In0.52As/Ga0.38In0.62As pseudomorphic HEMT's,” in 1988 IEDM Tech. Dig., pp. 180–183.
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