STRIPE - A high-speed VLSI bipolar technology featuring self-aligned single-poly base and submicron emitter contacts

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 53-54

  Drowley, C I ^a   Huang, W M ^a   Vande Voorde, P J ^a   Pettengill, D ^a   Turner, J E ^a   Kapoor, A K ^a   Lin, C H ^a   Burton, G ^a   Rosner, S J ^a   Brigham, K ^a   Fu, H S ^a   Oh, S Y ^a   Scott, M P ^a   Chiang, S Y ^a   Wang, A ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TECHNOLOGY; CONTACT SEPARATION; POLYSILICON ELECTRODES; SELF-ALIGNED; SILICON BIPOLAR TRANSISTORS; SINGLE LAYER; SINGLE-POLY; STRIPE STRUCTURE; SUBMICRON;

CUTOFF FREQUENCY; PHOTOLITHOGRAPHY; INTEGRATED CIRCUITS, VLSI; MICROWAVE DEVICES; SEMICONDUCTING SILICON;

POLYSILICON; TRANSISTORS, BIPOLAR;

DIGEST OF PAPER; POLYSILICON;

EID: 0025621992     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111004     Document Type: Conference Paper

References (6)

1. S. Konaka, et al., IEEE Trans. Electron Dev. ED-36, 1371 (1989)
2. T. Gomi, et al., 1988 IEDM Tech. Digest, p. 744
3. T.C. Chen, et al., Tech. Digest 1989 Symp. VLSI Technology, p. 87
4. H. Schaber and T.F. Meister, Proc. 1989 Bipolar Circuits and Technology Meeting, p. 75
5. T. Yamaguchi, et al., IEEE Trans. Electron Dev. ED-35, 2397 (1988)
6. M. Sugiyama, et al., 1989 IEDM Tech. Digest, p. 221