Particle-induced spatial dark current fluctuations in focal plane arrays

IEEE Transactions on Nuclear Science

Volumn 37, Issue 6, 1990, Pages 1784-1791

  Dale, Cheryl J ^a   Marshall, Paul W ^a,b   Burke, Edward A ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c SPIRE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ELECTRIC PROPERTIES; NEUTRONS; PROTONS;

DARK CURRENT DISTRIBUTION; MICRODOSIMETRY;

SEMICONDUCTING SILICON;

EID: 0025596382     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.101192     Document Type: Article

References (24)

1. C.J.Dale, P.W.Marshall, E.A.Burke, G.P.Summers, and G.E.Bender, “The Generation Lifetime Damage Factor and Its Variance in Si”, IEEE Trans. Nucl. Sci., NS-36, 1872 (1989).
2. J.R.Srour and R.A.Hartmann, “Effects of Single Neutron Interactions in Silicon Integrated Circuits,” IEEE Trans. Nucl. Sci. NS-32, 4195 (1985).
3. J.R.Srour, R.A.Hartmann, and K.S.Kitasaki, “Permanent Damage Produced by Single Proton Interactions in Silicon Devices,” IEEE Trans. Nucl. Sci. NS-33, 1597 (1986).
4. K.P.Klaasen, M.C.Clary, and J.R.Janesick, “Charge-Coupled Device Television Camera for NASA's Galileo Mission to Jupiter,” Opt. Eng. 23, 334 (1984).
5. P.W.Marshall, C.J.Dale, E.A.Burke, G.P.Summers, and G.E.Bender, “Displacement Damage Extremes in Si Depletion Regions,” IEEE Trans. Nucl. Sci., NS-36, 1831 (1989).
6. G.R.Hopkinson and C.Chlebek, “Proton Damage Events in an EEV CCD Imager,” IEEE Trans. Nucl. Sci NS-36, 1865 (1989).
7. J.R.Srour and R.A.Hartmann, “Enhanced Displacement Damage Effectiveness in Irradiated Silicon Devices,” IEEE Trans. Nucl. Sci. NS-36, 1825 (1989).
8. A.M.Kellerer, “Fundamentals of Microdosimetry” in The Dosimetry of Ionising Radiation, Vol. 1, K.R.Kase et al., (Academic Press, NY) 1985.
9. E.A.Burke, J.J.Boyle and H.J.Heummler, “Gamma-Induced Noise in CCDs,” IEEE Trans. Nucl. Sci., NS-28, 4068 (1981).
10. E.A.Burke, G.E.Bender, J.K.Pimbley, G.P.Summers, C.J.Dale, M.A.Xapsos, and P.W.Marshall, “Gamma Induced Dose Fluctuations in a Charge Injection Device,” IEEE Trans. Nucl. Sci. NS-35, 1302 (1988).
11. E.A.Burke, “Energy Dependence of Proton-Induced Displacement Damage in Silicon,” IEEE Trans. Nucl. Sci. NS-33, 1276 (1986).
12. G.P.Summers, E.A.Burke, C.J.Dale, E.A.Wolicki, P.W.Marshall, and M.A.Gehlhausen, “Correlation of Particle-Induced Induced Displacement Damage in Silicon,” IEEE Trans Nucl. Sci. NS-34, 1134 (1987).
13. E.A.Burke, C.J.Dale, A.B.Campbell, G.P.Summers, T.Palmer, and R.Zuleeg, “Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide,” IEEE Trans. Nucl. Sci. NS-34, 1220 (1987).
14. G.P.Summers, E.A.Burke, M.A.Xapsos, C.J.Dale, P.W.Marshall, and E.L.Petersen, “Displacement Damage in GaAs Structures,” IEEE Trans. Nucl. Sci. NS-35, 1221 (1988).
15. J.Lindhard, V.Nielsen, M.Scharff and P.V.Thomsen, “Integral Equations Governing Radiation Effects (Notes on Atomic Collisions, III),” Mat. Fys. Medd. Dan. Vid. Selsk. 33, N10, 1–42, 1963.
16. E.Parsen, Stochastic Processes, (Holden Day, Inc., NY) 1962.
17. W.E.Deming, Some Theory of Sampling, (Dover Publications, Inc., NY) 1950.
18. G.Vincent, A.Chantre and D.Bois, “Electric Field Effect on the Thermal Emission of Traps in Semiconductor Junctions,” J. Appl. Phys. 50, 5484 (1979).
19. P.A.Martin, B.G.Streetman, and K.Hess, “Electric Field Enhanced Emission from non-Coulombic Traps in Semiconductors,” J. Appl. Phys. 52, 7409 (1981).
20. +p Drain Diodes,” Sol. State Elect. 28, 417 (1985).
21. E.Hackbarth and D.D.Tang, “Inherent and Stress-Induced Leakage in Heavily Doped Silicon Junctions,” IEEE Trans. El. Dev. ED-35, 2108 (1988).
22. S.M.Sze, Physics of Semiconductor Devices, Second Edition, (John Wiley and Sons, NY) 1981.
23. P.W.Marshall, C.J.Dale, and E.A.Burke, “Proton-Induced Displacement Damage Distributions and Extremes in Silicon Microvolumes,” this transactions.
24. V.A.J. van Lint, R.E.Leadon, and J.F.Colwell, “Energy Dependence of Displacement Effects in Semiconductors,” IEEE Trans. Nucl. Sci. NS-19, 181 (1972).