A reliable bi-polarity write/erase technology in flash EEPROMs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 111-114

  Aritome, S ^a   Shirota, R ^a   Kirisawa, R ^a   Endoh, T ^a   Nakayama, R ^a   Sakui, K ^a   Masuoka, F ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, SEMICONDUCTOR; SEMICONDUCTING SILICON;

EEPROM; FOWLER-NORDHEIM (F-N) TUNNELING; HOT ELECTRONS; POLYSILICON; WRITE/ERASE TECHNOLOGY;

DATA STORAGE, DIGITAL;

EID: 0025577839     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)