Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 21-24

  Comfort, J H ^a   Patton, G L ^a   Cressler, J D ^a   Lee, W ^a   Crabbe, E F ^a   Meyerson, B S ^a   Sun, J Y C ^a   Stork, J M C ^a   Lu, P F ^a   Burghartz, J N ^a   Warnock, J ^a   Scilla, G ^a   Toh, K Y ^a   D'Agostino, M ^a   Stanis, C ^a   Jenkins, K ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS, EMITTER COUPLED; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES, BIPOLAR; SILICON GERMANIUM ALLOYS;

ECL GATE DELAYS; JUNCTION CAPACITANCES; POLYSILICON;

TRANSISTORS, BIPOLAR;

EID: 0025577369     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)