Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 297-300

  Burghartz, J N ^a   Comfort, J H ^a   Patton, G L ^a   Cressler, J D ^a   Meyerson, B S ^a   Stork, J M C ^a   Sun, Y Y C ^a   Scilla, G ^a   Warnock, J ^a   Ginsberg, B J ^a   Jenkins, K ^a   Toh, K Y ^a   Harame, D L ^a   Mader, S R ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; OSCILLATORS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS, BIPOLAR;

ECL RING OSCILLATORS; RING OSCILLATORS; SELECTIVE EPITAXY EMITTER WINDOW TRANSISTORS;

LOGIC CIRCUITS, EMITTER COUPLED;

EID: 0025577330     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)