Characterization of speed and stability of BiNMOS gates with a bipolar and PMOSFET merged structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 231-234

  Momose, Hiroshi ^a   Maeda, Takeo ^a   Inoue, Koutarou ^a   Kamohara, Itaru ^a   Kobayashi, Tomohiro ^a   Urakawa, Yukihiro ^a   Maeguchi, Kenji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

BINMOS; BIPMOSFET; PMOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025575636     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)