A large area 1.3-megapixel full-frame CCD image sensor with a lateral-overflow drain and a transparent gate electrode

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1990, Pages 287-290

  Kosman, S L ^a   Stevens, E G ^a   Cassidy, J C ^a   Chang, W C ^a   Roselle, P ^a   Miller, W A ^a   Mehra, M ^a   Burkey, B C ^a   Lee, T H ^a   Hawkins, G A ^a   Khosla, R P ^a  

^a EASTMAN KODAK COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, CHARGE COUPLED;

ANTIBLOOMING SUPPRESSION; CCD IMAGE SENSORS; LATERAL-OVERFLOW DRAIN; POLYSILICON; TRANSPARENT GATE ELECTRODES;

IMAGE SENSORS;

EID: 0025575635     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)