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Volumn 38, Issue 12, 1990, Pages 1986-1993

5-100 GHz InP coplanar waveguide MMIC distributed amplifier

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC - MILLIMETER WAVES; MOLECULAR BEAM EPITAXY; TRANSISTORS, HIGH ELECTRON MOBILITY; WAVEGUIDES;

EID: 0025566257     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.64584     Document Type: Article
Times cited : (66)

References (13)
  • 1
    • 0024684255 scopus 로고
    • A W-band channelized monolithic receiver
    • G. L. Lan J. C. Chen C. K. Pao M. I. Herman R. E. Neidart A W-band channelized monolithic receiver IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig. 95 100 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig. 1989
    • (1989) , pp. 95-100
    • Lan, G.L.1    Chen, J.C.2    Pao, C.K.3    Herman, M.I.4    Neidart, R.E.5
  • 2
    • 0025263104 scopus 로고
    • 94 GHz InP MMIC five-section distributed amplifier
    • R. Majidi-Ahy 94 GHz InP MMIC five-section distributed amplifier Electron. Lett. 26 2 91 92 Jan. 1990
    • (1990) Electron. Lett. , vol.26 , Issue.2 , pp. 91-92
    • Majidi-Ahy, R.1
  • 3
    • 0024883230 scopus 로고
    • High-performance InP-based HEMT millimeter-wave low-noise amplifiers
    • K. H. G. Duh High-performance InP-based HEMT millimeter-wave low-noise amplifiers IEEE MTT-S Int. Microwave Symp. Dig. 805 808 IEEE MTT-S Int. Microwave Symp. Dig. 1989
    • (1989) , pp. 805-808
    • Duh, K.H.G.1
  • 4
    • 0024886042 scopus 로고
    • A family of InGaAs/AlGaAs V-band monolithic HEMT LNA's
    • M. Aust A family of InGaAs/AlGaAs V-band monolithic HEMT LNA's GaAs IC Symp. Dig. 95 98 GaAs IC Symp. Dig. 1989
    • (1989) , pp. 95-98
    • Aust, M.1
  • 5
    • 0024902344 scopus 로고
    • A monolithic 0.5 to 50 GHz MODFET distributed amplifier with 6 dB gain
    • J. Perdomo M. Mierzwinski H. Kondoh C. Li T. Taylor A monolithic 0.5 to 50 GHz MODFET distributed amplifier with 6 dB gain GaAs IC Symp. Dig. 91 94 GaAs IC Symp. Dig. 1989
    • (1989) , pp. 91-94
    • Perdomo, J.1    Mierzwinski, M.2    Kondoh, H.3    Li, C.4    Taylor, T.5
  • 6
    • 0345198949 scopus 로고
    • Coplanar waveguides used in 2-18 GHz distributed amplifier
    • M. Riaziat I. Zubeck S. Bandy G. Zdasiuk Coplanar waveguides used in 2-18 GHz distributed amplifier IEEE MTT-S Int. Microwave Symp. Dig. 337 338 IEEE MTT-S Int. Microwave Symp. Dig. 1986
    • (1986) , pp. 337-338
    • Riaziat, M.1    Zubeck, I.2    Bandy, S.3    Zdasiuk, G.4
  • 7
    • 0024680636 scopus 로고
    • 100 GHz active electronic probe for on-wafer S-parameter measurements
    • R. Majidi-Ahy M. Shakouri D. M. Bloom 100 GHz active electronic probe for on-wafer S-parameter measurements Electron. Lett. 25 13 828 830 1989
    • (1989) Electron. Lett. , vol.25 , Issue.13 , pp. 828-830
    • Majidi-Ahy, R.1    Shakouri, M.2    Bloom, D.M.3
  • 8
    • 0024961597 scopus 로고
    • Millimeter-wave active probe frequency-multiplier for on-wafer characterization of GaAs devices and IC's
    • R. Majidi-Ahy D. M. Bloom Millimeter-wave active probe frequency-multiplier for on-wafer characterization of GaAs devices and IC's Electron. Lett. 25 1 6 8 1989
    • (1989) Electron. Lett. , vol.25 , Issue.1 , pp. 6-8
    • Majidi-Ahy, R.1    Bloom, D.M.2
  • 9
    • 85143008282 scopus 로고
    • 120 GHz active wafer probes for picosecond device measurements
    • R. Majidi-Ahy D. M. Bloom 120 GHz active wafer probes for picosecond device measurements Picosecond Electronics and Optoelectronics Conf. Proc. 31 35 Picosecond Electronics and Optoelectronics Conf. Proc. 1989
    • (1989) , pp. 31-35
    • Majidi-Ahy, R.1    Bloom, D.M.2
  • 10
    • 0021407924 scopus 로고
    • Calculation of the conduction band discontinuity for InAlAs/InGaAs heterojunction
    • D. F. Weslch G. W. Wicks L. F. Eastman Calculation of the conduction band discontinuity for InAlAs/InGaAs heterojunction J. Appl. Phys. 55 8 3176 1984
    • (1984) J. Appl. Phys. , vol.55 , Issue.8 , pp. 3176
    • Weslch, D.F.1    Wicks, G.W.2    Eastman, L.F.3
  • 12
    • 0025462663 scopus 로고
    • Impact of surface layer on InAlAs/InGaAs/InP high electron mobility transistors
    • Y. C. Pao Impact of surface layer on InAlAs/InGaAs/InP high electron mobility transistors IEEE Electron Device Lett. 11 7 312 314 1990
    • (1990) IEEE Electron Device Lett. , vol.11 , Issue.7 , pp. 312-314
    • Pao, Y.C.1
  • 13
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    • Highest current gain cutoff frequency with 0.08 µm gate HEMT on InP
    • M. Riaziat Highest current gain cutoff frequency with 0.08 µm gate HEMT on InP InP and Related Materials Proc. InP and Related Materials Proc. 1990
    • (1990)
    • Riaziat, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.