Microwave circuit modeling for semiconductor lasers under large and small signal conditions

Microwave and Optical Technology Letters

Volumn 3, Issue 11, 1990, Pages 379-382

  Elkadi, H ^a   Vilcot, J P ^a   Maricot, S ^a   Decoster, D ^a  

^a UNIV LILLE   (France)

Author keywords

modeling; Optoelectronics; semiconductor lasers

Indexed keywords

ELECTRIC NETWORKS, ACTIVE--EQUIVALENT CIRCUITS; ELECTRIC NETWORKS, NONLINEAR--COMPUTER SIMULATION; FIBER OPTICS; MICROWAVE DEVICES;

INJECTION CURRENT; LASER DIODES; MICROWAVE CIRCUIT MODELING; MICROWAVE FIBER OPTIC LINKS; MODULATION CURRENT; SIGNAL SIMULATION;

LASERS, SEMICONDUCTOR;

EID: 0025519579     PISSN: 08952477     EISSN: 10982760     Source Type: Journal    
DOI: 10.1002/mop.4650031102     Document Type: Article

References (10)

1. InGaAsP Buried Heterostructure Laser with 22 GHz Bandwidth and High Modulation Efficiency
2. New Laser Structure on Semi Insulating Substrate, Grown by MOCVD, for High Speed Operation
3. Modeling Rare Turn‐On Events of Injection Lasers
4. Large Signal Harmonic and Intermodulation Distortions in Wide‐Bandwidth GalnAsP Semiconductor Lasers
5. Dynamic Behaviors of Semiconductor Lasers undér Strong Sinusoidal Current Modulation: Modeling and Experiments at 1.3 μm
6. Microwave Circuit Model of Semiconductor Injection Lasers
7. Large Signal Circuit Model for Simulation of Injection Laser Modulation Dynamics
8. Large Signal Non‐Linear Distortion for a Single Mode Laser Diode under Microwave Intensity Modulation
9. Approximations for Fermi‐Dirac Integral especially the function F1/2( n) used to describe electron density in a semiconductor
10. Frequency Response of 1.3‐μm InGaAsP High Speed Semiconductor Laser