Relationship Between Measured and Intrinsic Conductances of MOSFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 11, 1990, Pages 2413-2414

  Cserveny, Stefan ^a  

^a Swiss Center for Electronics and Microtechniques ^*  (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; SUBSTRATES;

SMALL SIGNAL CONDUCTANCES;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025519325     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.62303     Document Type: Article

References (5)

1. S. Y. Chou and D. A. Antoniadis, “Relationship between measured and intrinsic transconductances of FETs',” IEEE Trans. Electron Devices, vol. ED-34, p. 448, 1987.
2. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York, NY: Wiley, 1981, p. 341.
3. J. R. Brews, K. K. Ng, and R. K. Watts, “Submicrometer silicon MOSFET” in Submicron Integrated Circuits, R. K. Watts, Ed. New York, NY: Wiley, 1989, p. 40.
4. T. Y. Chang and H. Gaw, “Performance and hot-carrier reliability of deep-submicrometer CMOS,” in IEDM Tech. Dig., p. 71, 1989.
5. Y. P. Tsividis, Operation and Modeling of the MOS Transistor. New York, NY: McGraw-Hill, 1987, p. 295.