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Volumn 122, Issue 1, 1990, Pages 97-109
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X‐Ray Analysis of Internal Stresses in Crystals II. Lattice Distortions Due to Residual Strains in Crystals Grown from Melts
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Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTING GALLIUM ARSENIDE - STRESSES;
SEMICONDUCTOR MATERIALS - GROWTH;
STRAIN;
X-RAY ANALYSIS;
DISLOCATION DENSITY;
INTERNAL STRESSES;
CRYSTALS;
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EID: 0025513194
PISSN: 00318965
EISSN: 1521396X
Source Type: Journal
DOI: 10.1002/pssa.2211220109 Document Type: Article |
Times cited : (7)
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References (21)
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