메뉴 건너뛰기




Volumn 9, Issue 11, 1990, Pages 1141-1149

Rigorous Thermodynamic Treatment of Heat Generation and Conduction in Semiconductor Device Modeling

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; MATHEMATICALTECHNIQUES - BOUNDARY VALUE PROBLEMS; OPTOELECTRONIC DEVICES; THERMAL CONDUCTIVITY; THERMODYNAMICS;

EID: 0025512595     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.62751     Document Type: Article
Times cited : (364)

References (26)
  • 1
    • 0021386255 scopus 로고
    • A study of GTO turn-off failure mechanism
    • A. Nakagawa and H. Ohashi, “A study of GTO turn-off failure mechanism,” IEEE Trans. Electron. Devices, vol. ED-31, pp. 273–279, 1984.
    • (1984) IEEE Trans. Electron. Devices , vol.ED-31 , pp. 273-279
    • Nakagawa, A.1    Ohashi, H.2
  • 2
    • 84907814452 scopus 로고
    • Temperature increase by self-heating in VLSI CMOS
    • D. Takacs and J. Trager, “Temperature increase by self-heating in VLSI CMOS,” in Conf. Rep. ESSDERC-87, 1987, pp. 729–732.
    • (1987) Conf. Rep. ESSDERC-87 , pp. 729-732
    • Takacs, D.1    Trager, J.2
  • 3
    • 0022756845 scopus 로고
    • Thermal properties of the Burrus-type light-emitting diode
    • W. Nakwaski, “Thermal properties of the Burrus-type light-emitting diode,” IEEE Trans. Electron. Devices, vol. ED-33, pp. 889–907, 1986.
    • (1986) IEEE Trans. Electron. Devices , vol.ED-33 , pp. 889-907
    • Nakwaski, W.1
  • 4
    • 84944483089 scopus 로고
    • Theory of flow of electrons and holes in germanium and other semiconductors
    • W. V. Van Roosbroeck, “Theory of flow of electrons and holes in germanium and other semiconductors,” Bell Syst. Tech. J., vol. 29, pp. 560–607, 1950.
    • (1950) Bell Syst. Tech. J. , vol.29 , pp. 560-607
    • Van Roosbroeck, W.V.1
  • 5
    • 0016884543 scopus 로고
    • Two-dimensional carrier flow in a transistor structure under nonisothermal conditions
    • S. P. Gaur and D. H. Navon, “Two-dimensional carrier flow in a transistor structure under nonisothermal conditions,” IEEE Trans. Electron. Devices, vol. ED-23, pp. 50–57, 1976.
    • (1976) IEEE Trans. Electron. Devices , vol.ED-23 , pp. 50-57
    • Gaur, S.P.1    Navon, D.H.2
  • 6
    • 0020829017 scopus 로고
    • Modeling thermal effects on MOS I-V characteristics
    • D. K. Sharma and K. V. Ramanathan, “Modeling thermal effects on MOS I-V characteristics,” IEEE Electron. Dev. Lett., vol. EDL-4, pp. 362–364, 1983.
    • (1983) IEEE Electron. Dev. Lett. , vol.EDL-4 , pp. 362-364
    • Sharma, D.K.1    Ramanathan, K.V.2
  • 7
    • 0017908416 scopus 로고
    • Accurate calculations of the forward drop and power dissipation in thyristors
    • M. S. Adler, “Accurate calculations of the forward drop and power dissipation in thyristors,” IEEE Trans. Electron. Devices, vol. ED-25, pp. 16–22, 1978.
    • (1978) IEEE Trans. Electron. Devices , vol.ED-25 , pp. 16-22
    • Adler, M.S.1
  • 8
    • 0018445592 scopus 로고
    • A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors
    • A. Chryssafis and W. Love, “A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors,” Solid-State Electron., vol. 22, pp. 249–256, 1979.
    • (1979) Solid-State Electron. , vol.22 , pp. 249-256
    • Chryssafis, A.1    Love, W.2
  • 9
    • 84942738030 scopus 로고
    • Exakte Berechnung der Verlustleistungsdichte in Halbleitern
    • H. Elschner, “Exakte Berechnung der Verlustleistungsdichte in Halbleitern,” Nachrichtentech. Elektron., vol. 29, pp. 415–418, 1979.
    • (1979) Nachrichtentech. Elektron. , vol.29 , pp. 415-418
    • Elschner, H.1
  • 10
    • 33748621800 scopus 로고
    • Statistics of the recombinations of holes and electrons
    • W. Shockley and W. T. Read, “Statistics of the recombinations of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 835-842
    • Shockley, W.1    Read, W.T.2
  • 11
    • 36149004075 scopus 로고
    • Electron hole recombination in germanium
    • R. N. Hall, “Electron hole recombination in germanium,” Phys. Rev., vol. 87, p. 387, 1952.
    • (1952) Phys. Rev. , vol.87 , pp. 387
    • Hall, R.N.1
  • 15
    • 36149006492 scopus 로고
    • Reciprocal relations in irreversible processes
    • L. Onsager, “Reciprocal relations in irreversible processes,” Phys. Rev., vol. 37, pp. 405–426, 1931.
    • (1931) Phys. Rev. , vol.37 , pp. 405-426
    • Onsager, L.1
  • 16
    • 0000370588 scopus 로고
    • Thermal conductivity of silicon, germanium, III— V Compounds and III-V alloys
    • P. D. Maycock, “Thermal conductivity of silicon, germanium, III— V Compounds and III-V alloys,” Solid-State Electron., vol. 10, pp. 161–168, 1967.
    • (1967) Solid-State Electron. , vol.10 , pp. 161-168
    • Maycock, P.D.1
  • 18
    • 84911818299 scopus 로고
    • The role of low-frequency phonons in thermoelectricity and thermal conductivity
    • Braunschweig, Vieweg
    • C. Herring, “The role of low-frequency phonons in thermoelectricity and thermal conductivity,” in Proc. Int. Coll. Garmisch-Partenkirchen 1956, Braunschweig, Vieweg, 1958, pp. 184–235.
    • (1958) Proc. Int. Coll. Garmisch-Partenkirchen 1956 , pp. 184-235
    • Herring, C.1
  • 19
    • 0015489215 scopus 로고
    • Semiconductor current-flow equations
    • R. Stratton, “Semiconductor current-flow equations,” IEEE Trans. Electron. Devices,” vol. ED-19, pp. 1288–1292, 1972.
    • (1972) IEEE Trans. Electron. Devices , vol.ED-19 , pp. 1288-1292
    • Stratton, R.1
  • 20
    • 48749147377 scopus 로고
    • On electrical transport in non-isothermal semiconductors
    • J. M. Dorkel, “On electrical transport in non-isothermal semiconductors,” Solid-State Electron., vol. 26, pp. 819–821, 1983.
    • (1983) Solid-State Electron. , vol.26 , pp. 819-821
    • Dorkel, J.M.1
  • 21
    • 36149007454 scopus 로고
    • Seebeck effect in silicon
    • T. H. Geballe and G. W. Hull, “Seebeck effect in silicon,” Phys. Rev., vol. 98, pp. 940–947, 1955.
    • (1955) Phys. Rev. , vol.98 , pp. 940-947
    • Geballe, T.H.1    Hull, G.W.2
  • 22
    • 0014744577 scopus 로고
    • Thermal conductivity and thermoelectric power of heavily doped n-type silicon
    • M. E. Brinson and W. Dunstan, “Thermal conductivity and thermoelectric power of heavily doped n-type silicon,” J. Phys., vol. C3, p. 483–491, 1970.
    • (1970) J. Phys. , vol.C3 , pp. 483-491
    • Brinson, M.E.1    Dunstan, W.2
  • 23
    • 84942739209 scopus 로고
    • private communication
    • E. Gmelin, private communication, 1989.
    • (1989)
    • Gmelin, E.1
  • 24
    • 84942737966 scopus 로고
    • 2D-Simulation von MOS-Bauelementen unter Berücksichtigung der Temperaturabhangigkeit wichtiger Halbleitereigenschaften
    • T. Förste, “2D-Simulation von MOS-Bauelementen unter Berücksichtigung der Temperaturabhangigkeit wichtiger Halbleitereigenschaften,” Wiss. Z. Techn. Univ. Dresden, vol. 36, pp. 45–50, 1987.
    • (1987) Wiss. Z. Techn. Univ. Dresden , vol.36 , pp. 45-50
    • Förste, T.1
  • 26
    • 0024065930 scopus 로고
    • Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors
    • K. Ramkumar and M. Satyam, “Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors,” Int. J. Electron., vol. 65, pp. 193–203, 1988.
    • (1988) Int. J. Electron. , vol.65 , pp. 193-203
    • Ramkumar, K.1    Satyam, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.