-
1
-
-
0021386255
-
A study of GTO turn-off failure mechanism
-
A. Nakagawa and H. Ohashi, “A study of GTO turn-off failure mechanism,” IEEE Trans. Electron. Devices, vol. ED-31, pp. 273–279, 1984.
-
(1984)
IEEE Trans. Electron. Devices
, vol.ED-31
, pp. 273-279
-
-
Nakagawa, A.1
Ohashi, H.2
-
2
-
-
84907814452
-
Temperature increase by self-heating in VLSI CMOS
-
D. Takacs and J. Trager, “Temperature increase by self-heating in VLSI CMOS,” in Conf. Rep. ESSDERC-87, 1987, pp. 729–732.
-
(1987)
Conf. Rep. ESSDERC-87
, pp. 729-732
-
-
Takacs, D.1
Trager, J.2
-
3
-
-
0022756845
-
Thermal properties of the Burrus-type light-emitting diode
-
W. Nakwaski, “Thermal properties of the Burrus-type light-emitting diode,” IEEE Trans. Electron. Devices, vol. ED-33, pp. 889–907, 1986.
-
(1986)
IEEE Trans. Electron. Devices
, vol.ED-33
, pp. 889-907
-
-
Nakwaski, W.1
-
4
-
-
84944483089
-
Theory of flow of electrons and holes in germanium and other semiconductors
-
W. V. Van Roosbroeck, “Theory of flow of electrons and holes in germanium and other semiconductors,” Bell Syst. Tech. J., vol. 29, pp. 560–607, 1950.
-
(1950)
Bell Syst. Tech. J.
, vol.29
, pp. 560-607
-
-
Van Roosbroeck, W.V.1
-
5
-
-
0016884543
-
Two-dimensional carrier flow in a transistor structure under nonisothermal conditions
-
S. P. Gaur and D. H. Navon, “Two-dimensional carrier flow in a transistor structure under nonisothermal conditions,” IEEE Trans. Electron. Devices, vol. ED-23, pp. 50–57, 1976.
-
(1976)
IEEE Trans. Electron. Devices
, vol.ED-23
, pp. 50-57
-
-
Gaur, S.P.1
Navon, D.H.2
-
6
-
-
0020829017
-
Modeling thermal effects on MOS I-V characteristics
-
D. K. Sharma and K. V. Ramanathan, “Modeling thermal effects on MOS I-V characteristics,” IEEE Electron. Dev. Lett., vol. EDL-4, pp. 362–364, 1983.
-
(1983)
IEEE Electron. Dev. Lett.
, vol.EDL-4
, pp. 362-364
-
-
Sharma, D.K.1
Ramanathan, K.V.2
-
7
-
-
0017908416
-
Accurate calculations of the forward drop and power dissipation in thyristors
-
M. S. Adler, “Accurate calculations of the forward drop and power dissipation in thyristors,” IEEE Trans. Electron. Devices, vol. ED-25, pp. 16–22, 1978.
-
(1978)
IEEE Trans. Electron. Devices
, vol.ED-25
, pp. 16-22
-
-
Adler, M.S.1
-
8
-
-
0018445592
-
A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors
-
A. Chryssafis and W. Love, “A computer-aided analysis of one-dimensional thermal transients in n-p-n power transistors,” Solid-State Electron., vol. 22, pp. 249–256, 1979.
-
(1979)
Solid-State Electron.
, vol.22
, pp. 249-256
-
-
Chryssafis, A.1
Love, W.2
-
9
-
-
84942738030
-
Exakte Berechnung der Verlustleistungsdichte in Halbleitern
-
H. Elschner, “Exakte Berechnung der Verlustleistungsdichte in Halbleitern,” Nachrichtentech. Elektron., vol. 29, pp. 415–418, 1979.
-
(1979)
Nachrichtentech. Elektron.
, vol.29
, pp. 415-418
-
-
Elschner, H.1
-
10
-
-
33748621800
-
Statistics of the recombinations of holes and electrons
-
W. Shockley and W. T. Read, “Statistics of the recombinations of holes and electrons,” Phys. Rev., vol. 87, pp. 835–842, 1952.
-
(1952)
Phys. Rev.
, vol.87
, pp. 835-842
-
-
Shockley, W.1
Read, W.T.2
-
11
-
-
36149004075
-
Electron hole recombination in germanium
-
R. N. Hall, “Electron hole recombination in germanium,” Phys. Rev., vol. 87, p. 387, 1952.
-
(1952)
Phys. Rev.
, vol.87
, pp. 387
-
-
Hall, R.N.1
-
15
-
-
36149006492
-
Reciprocal relations in irreversible processes
-
L. Onsager, “Reciprocal relations in irreversible processes,” Phys. Rev., vol. 37, pp. 405–426, 1931.
-
(1931)
Phys. Rev.
, vol.37
, pp. 405-426
-
-
Onsager, L.1
-
16
-
-
0000370588
-
Thermal conductivity of silicon, germanium, III— V Compounds and III-V alloys
-
P. D. Maycock, “Thermal conductivity of silicon, germanium, III— V Compounds and III-V alloys,” Solid-State Electron., vol. 10, pp. 161–168, 1967.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 161-168
-
-
Maycock, P.D.1
-
18
-
-
84911818299
-
The role of low-frequency phonons in thermoelectricity and thermal conductivity
-
Braunschweig, Vieweg
-
C. Herring, “The role of low-frequency phonons in thermoelectricity and thermal conductivity,” in Proc. Int. Coll. Garmisch-Partenkirchen 1956, Braunschweig, Vieweg, 1958, pp. 184–235.
-
(1958)
Proc. Int. Coll. Garmisch-Partenkirchen 1956
, pp. 184-235
-
-
Herring, C.1
-
19
-
-
0015489215
-
Semiconductor current-flow equations
-
R. Stratton, “Semiconductor current-flow equations,” IEEE Trans. Electron. Devices,” vol. ED-19, pp. 1288–1292, 1972.
-
(1972)
IEEE Trans. Electron. Devices
, vol.ED-19
, pp. 1288-1292
-
-
Stratton, R.1
-
20
-
-
48749147377
-
On electrical transport in non-isothermal semiconductors
-
J. M. Dorkel, “On electrical transport in non-isothermal semiconductors,” Solid-State Electron., vol. 26, pp. 819–821, 1983.
-
(1983)
Solid-State Electron.
, vol.26
, pp. 819-821
-
-
Dorkel, J.M.1
-
21
-
-
36149007454
-
Seebeck effect in silicon
-
T. H. Geballe and G. W. Hull, “Seebeck effect in silicon,” Phys. Rev., vol. 98, pp. 940–947, 1955.
-
(1955)
Phys. Rev.
, vol.98
, pp. 940-947
-
-
Geballe, T.H.1
Hull, G.W.2
-
22
-
-
0014744577
-
Thermal conductivity and thermoelectric power of heavily doped n-type silicon
-
M. E. Brinson and W. Dunstan, “Thermal conductivity and thermoelectric power of heavily doped n-type silicon,” J. Phys., vol. C3, p. 483–491, 1970.
-
(1970)
J. Phys.
, vol.C3
, pp. 483-491
-
-
Brinson, M.E.1
Dunstan, W.2
-
23
-
-
84942739209
-
-
private communication
-
E. Gmelin, private communication, 1989.
-
(1989)
-
-
Gmelin, E.1
-
24
-
-
84942737966
-
2D-Simulation von MOS-Bauelementen unter Berücksichtigung der Temperaturabhangigkeit wichtiger Halbleitereigenschaften
-
T. Förste, “2D-Simulation von MOS-Bauelementen unter Berücksichtigung der Temperaturabhangigkeit wichtiger Halbleitereigenschaften,” Wiss. Z. Techn. Univ. Dresden, vol. 36, pp. 45–50, 1987.
-
(1987)
Wiss. Z. Techn. Univ. Dresden
, vol.36
, pp. 45-50
-
-
Förste, T.1
-
26
-
-
0024065930
-
Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors
-
K. Ramkumar and M. Satyam, “Analysis of effects of ambients (temperature and light intensity) on the electrical breakdown in bipolar transistors,” Int. J. Electron., vol. 65, pp. 193–203, 1988.
-
(1988)
Int. J. Electron.
, vol.65
, pp. 193-203
-
-
Ramkumar, K.1
Satyam, M.2
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