A Self-Backgating GaAs MESFET Model for Low-Frequency Anomalies

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2148-2157

  Lee, Mankoo ^a   Forbes, Leonard ^a  

^a OREGON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONS--EMISSION; SEMICONDUCTING GALLIUM ARSENIDE;

DEEP LEVEL TRAPS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025508044     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59903     Document Type: Article

References (19)

1. M. K. Lee, L. Forbes, T. Hallen, and P. Tuinenga, “An analytical self-backgating GaAs MESFET model including deep-level trap effects,” in IEEE I EDM Tech. Dig., pp. 315–318, 1989.
2. N. Scheinberg. r. Bayruns, and r. Goyal, “A low-frequency GaAs MESFET circuit model,” IEEE J. Solid-State Circuits, vol. 23, pp. 605–608, 1988.
3. C. Camacho-Penalosa, “Modeling frequency dependence of output impedance of a microwave MESFET at low frequencies,” Electron. Lett., pp. 528–529, 1985.
4. P. F. Lindquist, “A model relating electrical properties and impurity concentrations in semi-insulating GaAs,” J. Appl. Phys., vol. 48, no. 3, pp. 1262–1267, Mar. 1977.
5. C. Kocot and C. Stolte, “Backgating effect in GaAs FET’s,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 963-968, 1982.
6. P. Canfield and L. Forbes, “Suppression of drain conductance transients, drain current oscillations and low-frequency generation-recombination noise in GaAs FET’s using buried channels,” IEEE Trans. Electron Devices, vol. ED-33, pp. 925–928, 1986.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York, NY: Wiley, 1981.
8. M. Ogawa and T. Kamiya, “Correlation between the backgating effect of a GaAs MESFET and the compensation mechanism of a semi-insulating substrate,” IEEE Trans. Electron Devices, vol. ED-32, pp. 571–576, 1985.
9. L. Larson, “An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 567–574, 1987.
10. T. Takada, K. Yokoyama, M. Ida, and T. Sudo, “A MESFET variable-capacitance model for GaAs integrated circuit simulation,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 719–723, 1982.
11. W. Curtice, “GaAs MESFET modeling and nonlinear CAD,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 220–230, 1988.
12. H. Statz, P. Newman, I. Smith, R. Pacel, and H. Hauss, “GaAs FET device and circuit simulation in SPICE,” IEEE Trans. Electron Devices, vol. ED-34, pp. 160–169, 1987.
13. T. Hallen, private note, Tektronix, Beaverton, OR.
14. M. Ogawa and T. Kamiya, “Device model for ion-implanted GaAs MESFET including compensation mechanism of SI substrate,” in Extended Abs. 15th Conf. on Solid-State Devices and Materials, pp. 77–80, 1983.
15. R. E. Neidert and C. J. Scott, “Computer program for microwave MESFET modelling,” Naval Research Lab., Washington, DC, Rep. WRI 8561, Feb. 1982.
16. A. M. Grebene and P. D. Gandhi, “General theory for pinched operation of the junction-gate FET,” Solid-State Electron., vol. 12, pp. 573–589, 1969.
17. M. K. Lee and L. Forbes, “A self-backgating GaAs MESFET circuit model for low frequency anomalies; Part I: Sub-circuit implementation,” Tech. Rep. MERC. 1/89, Tektronix, Beaverton, OR, May 1989.
18. F. Weinert, “Scattering parameters speed design of high-frequency transistors or circuits,” Electronics, Sept. 5, 1966.
19. M. K. Lee, L. Forbes, and T. Hallen, “Design of a GaAs operational amplifier using a self-backgating MESFET model including deep-level trap effects,” in Proc. IEEE Int. Symp. on Circuits and Systems, pp. 2287–2290, May 1990.