Novel Properties of a 0.1-μm-Long Split-Gate MODFET

IEEE Electron Device Letters

Volumn 11, Issue 10, 1990, Pages 469-471

  Ismail, K ^a   Lee, K Y ^a   Kern, D P ^a   Hong, J M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LITHOGRAPHY--ELECTRON BEAM;

CUTOFF FREQUENCY; HIGH VOLTAGE GAIN; MODFET; SHORT CHANNEL EFFECTS; THRESHOLD VOLTAGE TUNABILITY; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0025507287     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62999     Document Type: Article

References (7)

1. U. K. Mishra, A. S. Brown, and S. E. Rosenbaum, “DC and RF performance of 0.1 μm gate length Al0.48In0.52As/Ga0.47In0.53As pseudomorphic HEMTs,” in IEDM Tech. Dig., 1988, p. 180.
2. T. Furutsuka, M. Ogawa, and N. Kawamura, “GaAs dual-gate MESFET’s,” IEEE Trans. Electron Devices, vol. ED-25, p. 580, 1978.
3. M. Shur, “Split-gate field-effect transistor,” Appl. Phys. Lett., vol. 54, p. 162, 1989.
4. K. Ismail, D. A. Antoniadis, and H. I. Smith, “Lateral resonant tunneling in a dual-gate MODFET,” Appl. Phys. Lett., vol. 55, p. 589, 1989.
5. T. Shawki, G. Salmer, and O. El-Sayed, “MODFET 2D hydrody-namic energy modeling: Optimization of subquarter-micrometer-gate structures,” IEEE Trans. Electron Devices, vol. 37, p. 21, 1990.
6. J. G. Ruch, “Electron dynamics in short channel field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-19, p. 652, 1972.
7. G. Bernstein and D. K. Ferry, “Velocity overshoot in ultra-short gate-length MESFETs,” IEEE Trans. Electron Devices, vol. 35, p. 887, 1988.