Experimental Characterization and Modeling of Electron Saturation Velocity in MOSFET’s Inversion Layer from 90 to 350 K

IEEE Electron Device Letters

Volumn 11, Issue 10, 1990, Pages 466-468

  Chan, Tung Yi ^a   Lee, Shiuh Wuu ^a   Gaw, Henry ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, CMOS;

CARRIER TRANSPORT MODELS; ELECTRON SATURATION VELOCITY; SATURATION TRANSCONDUCTANCE; SURFACE MOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025503340     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62998     Document Type: Article

References (17)

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