Ultrahigh Power Efficiency Operation of Common-Emitter and Common-Base HBT's at 10 GHz

IEEE Transactions on Microwave Theory and Techniques

Volumn 38, Issue 10, 1990, Pages 1381-1390

  Wang, N L ^a   Sheng, N H ^a   Chang, M F ^a   Ho, W J ^a   Sullivan, G J ^a   Sovero, E A ^a   Higgins, J A ^a   Asbeck, P M ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPEDANCE MATCHING; SPECTRUM ANALYSIS; TRANSISTORS - MICROWAVES; TRANSISTORS, FIELD EFFECT;

COMMON BASE HBT; COMMON EMITTER HBT; HBT JUNCTION TEMPERATURE; MICROWAVE POWER HBT;

TRANSISTORS, BIPOLAR;

EID: 0025503225     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.58675     Document Type: Article

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