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Volumn 25, Issue 5, 1990, Pages 1068-1074

A 20-ns 4-Mb CMOS SRAM with Hierarchical Word Decoding Architecture

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; DATA STORAGE, SEMICONDUCTOR - STORAGE DEVICES; INTEGRATED CIRCUITS, CMOS;

EID: 0025502963     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.62126     Document Type: Article
Times cited : (47)

References (14)
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    • Komatsu, T.1
  • 2
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    • A 34-ns 1-Mbit CMOS SRAM using triple polysilicon
    • Oct.
    • T. Wada et al., “A 34-ns 1-Mbit CMOS SRAM using triple polysilicon,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 727–732, Oct. 1987.
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  • 3
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    • M. Matsui et al., “A 25-ns 1-Mbit CMOS SRAM with loading-free bit lines,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 733–740, Oct. 1987.
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    • Matsui, M.1
  • 4
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    • A 42-ns 1Mb CMOS SRAM
    • Feb.
    • O. Minato et al., “A 42-ns 1Mb CMOS SRAM,” in 755CC Dig. Tech. Papers, Feb. 1987, pp. 260–261.
    • (1987) 755CC Dig. Tech. Papers , pp. 260-261
    • Minato, O.1
  • 5
    • 0024091766 scopus 로고
    • A 14-ns 1-Mbit CMOS SRAM with variable bit organization
    • Oct.
    • Y. Kohno et al., “A 14-ns 1-Mbit CMOS SRAM with variable bit organization,” IEEE J. Solid-State Circuits, vol. 23, pp. 1060–1066, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1060-1066
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  • 6
    • 0024090004 scopus 로고
    • A 15-ns 1-Mbit CMOS SRAM
    • Oct.
    • K. Sasaki et al., “A 15-ns 1-Mbit CMOS SRAM,” IEEE J. Solid-State Circuits, vol. 23, pp. 1067–1072, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1067-1072
    • Sasaki, K.1
  • 7
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    • A 18-ns 1-Mbit CMOS SRAM
    • Oct.
    • H. Shimada et al., “A 18-ns 1-Mbit CMOS SRAM,” IEEE J. Solid-State Circuits, vol. 23, pp. 1073–1077, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1073-1077
    • Shimada, H.1
  • 8
    • 0024751999 scopus 로고
    • A 25-ns 4-Mbit CMOS SRAM with dynamic bit-line load
    • Oct.
    • F. Miyaji et al., “A 25-ns 4-Mbit CMOS SRAM with dynamic bit-line load,” IEEE J. Solid-State Circuits, vol. 24, pp. 1213–1218, Oct. 1989.
    • (1989) IEEE J. Solid-State Circuits , vol.24 , pp. 1213-1218
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  • 9
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    • A 20 ns 4Mb CMOS SRAM with hierarchical word decoding architecture
    • Feb.
    • T. Hirose et al., “A 20 ns 4Mb CMOS SRAM with hierarchical word decoding architecture,” in ISSCC Dig. Tech. Papers, Feb. 1990, pp. 132–133.
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    • Hirose, T.1
  • 10
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    • A divided word-line structure in the static RAM and its application to a 64k full CMOS RAM
    • Oct.
    • M. Yoshimoto et al., ‘‘A divided word-line structure in the static RAM and its application to a 64k full CMOS RAM,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 479–485, Oct. 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 479-485
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  • 11
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    • Oct.
    • M. Kumanoya et al., “A reliable 1-Mbit DRAM with a multi-bit-test mode,” IEEE J. Solid-State Circuits, vol. SC-20, pp. 909–913, Oct. 1985.
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  • 12
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    • Oct.
    • T. Ohsawa et al., “A 60-ns 4-Mbit CMOS DRAM with built-in self test function,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 663–668, Oct. 1987.
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  • 13
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    • P. H. Voss et al., “A 14-ns 256KX1 CMOS SRAM with multiple test modes,” IEEE J. Solid-State Circuits, vol. 24, pp. 874–880, Aug. 1989.
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  • 14
    • 0024906248 scopus 로고
    • A new process technology for a 4-Mbit SRAM polysilicon load resistor cell
    • May
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    • Yuzuriha, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.