Impedance and Switching of GaAs p-i-n Diodes

IEEE Transactions on Microwave Theory and Techniques

Volumn 38, Issue 10, 1990, Pages 1526-1528

  Abid, Z ^a   Gopinath, A ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRIC IMPEDANCE; ELECTRIC SWITCHES, SEMICONDUCTOR;

2D DRIFT-DIFFUSION; DIODE TURN-OFF SWITCHING TIME; GALLIUM ARSENIDE P-I-N DIODES; P-I-N FORWARD CURRENT; RF ADMITTANCE;

SEMICONDUCTOR DIODES;

EID: 0025502782     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.58698     Document Type: Article

References (4)

1. R. H. Caverly and G. Hiller, “The frequency-dependent impedance of p-i-n diodes,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 787–790, Apr. 1989.
2. A. Gopinath and H. Atwater, “Simulation of GaAs p-i-n diodes,” IEEE Trans. Electron Devices, vol. 35, pp. 414–417, Apr. 1988.
3. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
4. A. Gopinath, “Comparison of GaAs MESFET and GaAs p-i-n diodes as switch elements,” IEEE Electron Device Lett., vol. EDL-6, pp. 505–506, 1985.