Development of static random access memories using complementary heterostructure insulated gate field effect transistor technology

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1990, Pages 143-146

  Grider, D E ^a   Akinwande, A I ^a   Mactaggart, R ^a   Ruden, P P ^a   Nohava, J C ^a   Nohava, T E ^a   Breezley, J E ^a   Joslyn, P ^a   Tetzlaff, D ^a  

^a HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT;

COMPLEMENTARY HETEROSTRUCTURE INSULATED GATE FETS (C-HIGFET); RING OSCILLATOR CIRCUITS; STATIC RANDOM ACCESS MEMORIES (SRAM);

DATA STORAGE, DIGITAL;

EID: 0025495933     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)