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Volumn 29, Issue 9, 1990, Pages L1669-L1671
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632.7 nm cw operation (20°c) of algainp visible laser diodes fabricated on (001) 6° off toward [110] gaas substrate
a a a a a a a
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NEC CORPORATION
(Japan)
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Author keywords
AIGalnP; Continuous wave operation; MOVPE; Natural superlattice; Off angle substrate; Visible laser diode
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Indexed keywords
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE--SUBSTRATES;
ALUMINUM GALLIUM INDIUM PHOSPHIDE;
LASER DIODES;
METALORGANIC VAPOR PHASE EPITAXY;
LASERS, SEMICONDUCTOR;
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EID: 0025493670
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.29.L1669 Document Type: Article |
Times cited : (42)
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References (12)
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