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Volumn 6, Issue 4, 1990, Pages 275-284

Temperature dependence of microelectronic device failures

Author keywords

Arrhenius; Corrosion; Die Metallization; Dielectric failure; Electrical overstress; Electromigration; Electrostatic discharge; Eyring; Fatigue; Flexure; Fracture; Hot electrons Surface charge; Metallization migration; Oxide breakdown; Passivation layer; Rate of temperature change; Slow trapping; Temperature gradients; Wire bonds

Indexed keywords

FAILURE ANALYSIS; MICROELECTRONICS - RELIABILITY;

EID: 0025493386     PISSN: 07488017     EISSN: 10991638     Source Type: Journal    
DOI: 10.1002/qre.4680060410     Document Type: Article
Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.