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Volumn 8, Issue 8, 1990, Pages 1137-1144

Numerical Simulation of the Nonlinear Response of a p-i-n Photodiode Under High Illumination

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER PROGRAMMING--ALGORITHMS; HARMONIC GENERATION; LIGHT; MATHEMATICAL TRANSFORMATIONS--FAST FOURIER TRANSFORMS; RADIATION EFFECTS;

EID: 0025469251     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/50.57833     Document Type: Article
Times cited : (155)

References (13)
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    • J. E. Bowers and C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetector," J. Lightwave Technol., vol. LT-5, pp. 1339– 1350, Oct. 1987.
    • (1987) J. Lightwave Technol. , vol.LT-5 , pp. 1339-1350
    • Bowers, J.E.1    Burrus, C.A.2
  • 3
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    • D. G. Parker, "The theory, fabrication and assessment of ultra highspeed photodiodes," GECJ. Res., vol. 6, no. 2, pp. 106–117, 1988.
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    • Parker, D.G.1
  • 5
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    • Transit-Time Considerations in p-i-n diodes
    • Mar.
    • G. Lucovski, R. F. Schwarz, and R. B. Emmons, "Transit-Time Considerations in p-i-n diodes," J. Appl. Phys., vol. 35, pp. 622– 628, Mar. 1964.
    • (1964) J. Appl. Phys. , vol.35 , pp. 622-628
    • Lucovski, G.1    Schwarz, R.F.2    Emmons, R.B.3
  • 6
    • 0347006413 scopus 로고
    • Photodiodes for coherent detection: Modeling and experimental results
    • Colloque C4, tome 49, Sept. also presented at 18th European Solid-State Device Research Conf., Montpellier, France, Sept. 13–16.
    • J. E. Viallet et al., "Photodiodes for coherent detection: Modeling and experimental results," J. de Physique, Colloque C4, suppl. 9, tome 49, Sept. 1988; also presented at 18th European Solid-State Device Research Conf., Montpellier, France, Sept. 13–16.
    • (1988) J. de Physique
    • Viallet, J.E.1
  • 7
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    • Investigations of an optoelectronic nonlinear effect in a InGaAs photodiode, and its application in a coherent optical communication system
    • Feb.
    • D. A. Humphreys and R. A. Lobbett, "Investigations of an optoelectronic nonlinear effect in a InGaAs photodiode, and its application in a coherent optical communication system," Proc. Inst. Elec. Eng., vol. 135, no. 1, pp. 45–51, Feb. 1988.
    • (1988) Proc. Inst. Elec. Eng. , vol.135 , Issue.1 , pp. 45-51
    • Humphreys, D.A.1    Lobbett, R.A.2
  • 8
    • 0040990218 scopus 로고
    • Experiment on Ge-GaAs heterojunction
    • R. L. Anderson, "Experiment on Ge-GaAs heterojunction," Solid-State Electron., vol. 5, p. 341, 1962.
    • (1962) Solid-State Electron. , vol.5 , pp. 341
    • Anderson, R.L.1
  • 9
    • 84942218154 scopus 로고
    • Electron and hole mobilities in InGaAs
    • (Inst. Phys. Conf. Series 56), H. W. Thim, Ed. London: Institute of Physics
    • T. P. Pearsall, G. Beuchet, J. P. Hirtz, N. Visentin, and M. Bonnet, "Electron and hole mobilities in InGaAs," in GaAs and Related Compounds (Inst. Phys. Conf. Series 56), H. W. Thim, Ed. London: Institute of Physics, 1980.
    • (1980) GaAs and Related Compounds
    • Pearsall, T.P.1    Beuchet, G.2    Hirtz, J.P.3    Visentin, N.4    Bonnet, M.5
  • 10
    • 0020207189 scopus 로고
    • Temperature dependent electron velocity-field characteristics for InGaAs at high electric fields
    • T. H. Windhorn, L. W. Cook, and G. E. Stillman, "Temperature dependent electron velocity-field characteristics for InGaAs at high electric fields," J. Electron. Mater., vol. 11, no. 6, pp. 1065–1082, 1982.
    • (1982) J. Electron. Mater. , vol.11 , Issue.6 , pp. 1065-1082
    • Windhorn, T.H.1    Cook, L.W.2    Stillman, G.E.3
  • 11
    • 0009956071 scopus 로고
    • Measurement of hole velocity in n-type InGaAs
    • May
    • P. Hill et al., "Measurement of hole velocity in n-type InGaAs," Appl. Phys. Lett., vol. 50, no. 18, pp. 1260–1262, May 1987.
    • (1987) Appl. Phys. Lett. , vol.50 , Issue.18 , pp. 1260-1262
    • Hill, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.