Calculated deformation potentials in Si, Ge, and GeSi

Solid State Communications

Volumn 75, Issue 1-12, 1990, Pages 39-43

  Schmid, U ^a   Christensen, N E ^a,b   Cardona, M ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GERMANIUM - ELECTRONIC PROPERTIES; SEMICONDUCTING GERMANIUM COMPOUNDS - ELECTRONIC PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS - ELECTRONIC PROPERTIES;

ELECTRONIC DEFORMATION POTENTIALS; HYDROSTATIC STRAIN; LINEAR MUFFIN-TIN ORBITAL (LMTO) METHOD; SPIN-ORBIT COUPLING; UNIAXIAL STRAIN; VOLUME SCALING PARAMETERS;

SEMICONDUCTING SILICON;

EID: 0025462179     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(90)90154-4     Document Type: Article

References (36)

1. GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
2. Direct-band-gap absorption in germanium under pressure
3. Self-consistent electronic structure of Si, Ge and diamond by the LMTO-ASA method
4. Deformation potentials and internal strain parameter of silicon
5. Space groups of Ge/Si superlattices grown along the [110], [111], [112], [120], and [114] directions
6. Analytical model for self-energy operators and exchange-correlation potentials in non-metals
7. Hydrostatic Pressure Coefficients and Deformation Potentials for II–VI Compounds