Experimental technology and performance of 0.1-μm-gate-length FETs operated at liquid-nitrogen temperature

IBM Journal of Research and Development

Volumn 34, Issue 4, 1990, Pages 452-465

  Sai Halasz, G A ^a   Wordeman, M R ^a   Kern, D P ^a   Rishton, S A ^a   Ganin, E ^a   Chang, T H P ^a   Dennard, R H ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; LITHOGRAPHY--ELECTRON BEAM; OSCILLATORS; SEMICONDUCTING SILICON;

EXTRINSIC TRANSCONDUCTANCES; POLYSILICON-GATED FET; RING OSCILLATORS; SILICON FET;

TRANSISTORS, FIELD EFFECT;

EID: 0025455892     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.344.0452     Document Type: Article

References (30)