A model of charge transport in thermal SiO2 implanted with Si

Solid State Electronics

Volumn 33, Issue 7, 1990, Pages 893-905

  Kalnitsky, A ^a   Boothroyd, A R ^b   Ellul, J P ^a  

^a NORTEL NETWORKS   (Canada)

^b CARLETON UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - APPLICATIONS; SEMICONDUCTOR MATERIALS - CHARGE CARRIERS;

CHARGE TRANSPORT MODEL; I-V CHARACTERISTICS; NEGATIVE TRAPPED CHARGE; RATE EQUATIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0025452444     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(90)90071-L     Document Type: Article

References (30)

1. Fowler-Nordheim Tunneling into Thermally Grown SiO2
2. Electrical Conduction and Dielectric Breakdown in Silicon Dioxide Films on Silicon
3. A characterization model for ramp-voltage-stressed I-V characteristics of thin thermal oxides grown on silicon substrate
4. Kronig-Penney-Type Calculations for Electron Tunneling through Thin Dielectric Films
5. The Effect of theE(k)-Relation on Tunneling through Asymmetric Barriers
6. New Conduction and Reversible Memory Phenomena in Thin Insulating Films
7. Poole-Frenkel conduction in amorphous solids
8. Tunnel emission into an insulating film with traps
9. Variations of trap states and dangling bonds in CVD Si3N4 layer on Si substrate by NH3/SiH4 ratio
10. Barrier heights at the polycrystalline silicon-SiO2 interface