Electron-Beam-Induced Damage Study in GaAs-AlGaAs Heterostructures as Determined by Magnetotransport Characterization

IEEE Transactions on Electron Devices

Volumn 37, Issue 6, 1990, Pages 1422-1425

  Fink, Tobin ^a   Smith, Doran D ^b   Braddock, W David ^b,c  

^a U S ARMY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Department of Population Medicine and Diagnostic Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON GAS; HALL BARS; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); MAGNETOTRANSPORT; MODFET; SCHUBNIKOV-DE HAAS OSCILLATIONS;

TRANSISTORS, FIELD EFFECT;

EID: 0025446793     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.106235     Document Type: Article

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