Simple extraction method for mobility parameters in si-mosfets at 77 k

Electronics Letters

Volumn 26, Issue 13, 1990, Pages 852-853

  Lee, J I ^a   Lee, M B ^a   Kang, K N ^a   Park, K O ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

FETs; materials; materials testing; Semiconductor devices

Indexed keywords

SEMICONDUCTING SILICON;

ELECTRON MOBILITY; EXTRACTION METHOD; FIELD MOBILITY; MOBILITY PARAMETERS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025446435     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19900558     Document Type: Article

References (4)

1. Fang, F. F., and Howard, W. E.: ‘Negative field-effect mobility on (100) Si surfaces’, Phys. Rev. Lett., 1966, 16, pp. 797-799.
2. ONG, T.-C., KO, P. K., and Hu, C.: ‘50-A gate oxide MOSFETs at 77 K’, IEEE Trans., 1987, ED-34, pp. 2129-2135.
3. Stern, F.: ‘Self-consistent results for n-type Si inversion layers’, Phys. Rev. B, 1972, 5, pp. 4891-4899.
4. Ghibaudo, G., and Balestra, F.: ‘A method for MOSFET parameter extraction at very low temperature’, Solid-State Electron., 1989, 32, pp. 221-223.