Stress distribution analysis in structured GaAs layers fabricated on si substrates

Japanese Journal of Applied Physics

Volumn 29, Issue 6, 1990, Pages L853-L855

  Sakai, Shiro ^a   Kawasaki, Koji ^a   Wada, Naoki ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Calculation; Defect; Finite element method; Gaas on Si; Mesa stripe; Stress; Thermal stress

Indexed keywords

MATHEMATICAL TECHNIQUES--FINITE ELEMENT METHOD; SEMICONDUCTING FILMS; SILICON AND ALLOYS;

LATTICE MISMATCH; MESA STRIPES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0025445451     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.29.L853     Document Type: Article

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