Physical parameter extraction by inverse device modelling: Application to one- and two-dimensional doping profiling

Solid State Electronics

Volumn 33, Issue 6, 1990, Pages 757-771

  Ouwerling, G J L ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, CHARGE COUPLED--JUNCTIONS; SEMICONDUCTOR MATERIALS--DOPING;

CHANNEL MOBILITY; DOPING PROFILES; INVERSE MODELING; PARAMETER EXTRACTION; TWO-DIMENSIONAL DOPING PROFILING;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025439002     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(90)90190-P     Document Type: Article

References (56)

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5. General optimization and extraction of IC device model parameters
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7. Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
8. A physically based mobility model for MOSFET numerical simulation
9. A Comparison of Several Current Optimization Methods, and the use of Transformations in Constrained Problems