Growth and Luminescence Properties of Mg-Doped GaN Prepared by MOVPE

Journal of the Electrochemical Society

Volumn 137, Issue 5, 1990, Pages 1639-1641

  Amano, Hiroshi ^a   Kitoh, Masahiro ^a   Hiramatsu, Kazumasa ^a   Akasaki, Isamu ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; LUMINESCENCE--SPECTRUM ANALYSIS; SEMICONDUCTOR DIODES, LIGHT EMITTING--MATERIALS; SEMICONDUCTOR MATERIALS--DOPING;

BLUE LIGHT EMITTING DEVICES; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0025432263     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2086742     Document Type: Article

References (7)

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3. H. Amano, M. Kito, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Cryst. Growth, 93, 79 (1988).
4. M. Ilegems and R. Dingle, J. Appl. Phys., 44, 4234 (1973).
5. H. P. Maruska, D. A. Stevenson, and J. I. Pankove, Appl. Phys. Lett., 22, 303 (1973).
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7. H. Amano, M. Kitoh, K. Hiramatsu, and I. Akasaki, To be published in the Proceedings of the 16th International Symposium on Gallium Arsenide and Related Compounds held at Karuizawa, Japan, 1989.