Characterisation of the time-dependent properties of GaAs FETs

Semiconductor Science and Technology

Volumn 5, Issue 5, 1990, Pages 395-403

  Jin, Gongjiu ^a   Jones, B K ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; PARASITIC RESISTANCES; TIME DEPENDENCE;

SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

TRANSISTORS, FIELD EFFECT;

EID: 0025431981     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/5/5/004     Document Type: Article

References (23)

1. Electrical traps in GaAs microwave f.e.t.s
2. Backgating and light sensitivity in ion-implanted GaAs integrated circuits
3. Current saturation and small-signal characteristics of GaAs field-effect transistors
4. Stability of performance and interfacial problems in GaAs MESFET's
5. Low field mobility in GaAs ion-implanted FET's
6. The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits
7. Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures