High-Power Operation Mode of Pulsed IMPATT Diodes

IEEE Electron Device Letters

Volumn 11, Issue 5, 1990, Pages 206-208

  Behr, W ^a   Luy, J F ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; HEAT SINKS; SEMICONDUCTING SILICON;

CARRIER INJECTION; CURRENT DENSITIES;

SEMICONDUCTOR DIODES, IMPATT;

EID: 0025430452     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.55251     Document Type: Article

References (10)

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8. J. F. Luy, G. Baur, and E. Kasper, “Space-charge-influenced avalanche-breakdown characteristics: An improved approximation,” Electron. Lett., no. 12, pp. 638–640, 1987.
9. W. Harth and M. Claassen, Aktive Mikrowellendioden. Berlin: Springer-Verlag, 1981.
10. T. Misawa, “Negative resistance in p-n junctions under avalanche breakdown conditions, Part I,” IEEE Trans. Electron Devices, vol. ED-13, no. 1, pp. 137–142, 1966.