Electrical Properties of Gallium‐Doped Zinc Oxide Films Prepared by RF Sputtering

Journal of the American Ceramic Society

Volumn 73, Issue 5, 1990, Pages 1347-1350

  Choi, Byung Ho ^a   Im, Ho Bin ^a   Song, Jin Soo ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Institute of Energy Research (KIER)   (South Korea)

Author keywords

electrical properties; films; gallium; sputtering; zinc oxide

Indexed keywords

COATINGS - SPUTTERING; FILMS - OPTICAL PROPERTIES; SEMICONDUCTING FILMS - ELECTRIC PROPERTIES;

CONDUCTION BAND; FERMI ENERGY; GALLIUM-DOPED ZINC OXIDE; OPTICAL BAND GAP; RF SPUTTERING; ZINC OXIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0025430404     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1990.tb05203.x     Document Type: Article

References (12)

1. Screen Printed Thin Film CdS/CdTe Solar Cell
2. Effects of Thickness and Sintering Conditions of CdS Films on the Photovoltaic Properties of CdS/CdTe Solar Cells
3. 2
4. High Efficiency Thin Film CdTe Solar Cells
5. 2 Devices
6. Tin and Indium‐Doped Zinc Oxide Films Prepared by RF Magnetron Sputtering
7. Highly Conductive and Transparent Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
8. Electrical Properties and Non‐Stoichiometry in ZnO Single Crystals
9. Anomalous Optical Absorption Limit in InSb
10. Absorption Edge Shift in ZnO Thin Films at High Carrier Densities