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Volumn 101, Issue 1-4, 1990, Pages 199-203

Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

Author keywords

[No Author keywords available]

Indexed keywords

ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0025412835     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(90)90965-N     Document Type: Article
Times cited : (57)

References (19)
  • 10
    • 84917875239 scopus 로고    scopus 로고
    • A.W. Brinkman et al., private communications.
  • 11
    • 84917875238 scopus 로고    scopus 로고
    • B. Langen et al., to be published.
  • 12
    • 0000274210 scopus 로고
    • Exchange and polaron corrections for excitons in the degenerate-band case
    • (1981) Physical Review B , vol.23 B , pp. 1961
    • Rössler1
  • 16
    • 84917875237 scopus 로고    scopus 로고
    • H.P. Wagner et al., to be published.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.