|
Volumn 101, Issue 1-4, 1990, Pages 199-203
|
Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb
a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
SEMICONDUCTING FILMS;
SEMICONDUCTING GALLIUM ARSENIDE;
CRYSTALS--EPITAXIAL GROWTH;
SEMICONDUCTING GALLIUM COMPOUNDS;
VAPOR PHASE EPITAXY;
ZINC TELLURIDE;
HOT WALL EPITAXY;
METALORGANIC VAPOR PHASE EPITAXY (MOVPE);
SEMICONDUCTING ZINC COMPOUNDS;
|
EID: 0025412835
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(90)90965-N Document Type: Article |
Times cited : (57)
|
References (19)
|